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APTGV50H120T3G - Microsemi Corporation - Transistors - IGBTs - Modules

APTGV50H120T3G

Microsemi Corporation

IGBT MODULE 1200V 75A 270W SP3

APTGV50H120T3G is a Transistors - IGBTs - Modules manufactured by Microsemi Corporation. IGBT MODULE 1200V 75A 270W SP3. Key specifications: mounting type Chassis Mount, package / case SP3, current - collector (ic) (max) 75 A, power - max 270 W.

In Stock: 8,780

Product Attributes

AttributeValue
Product StatusObsolete
IGBT TypeNPT, Trench Field Stop
ConfigurationFull Bridge Inverter
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)75 A
Power - Max270 W
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 50A
Current - Collector Cutoff (Max)250 µA
Input Capacitance (Cies) @ Vce3.6 nF @ 25 V
InputStandard
NTC ThermistorYes
Operating Temperature-
Mounting TypeChassis Mount
Package / CaseSP3
Supplier Device PackageSP3

Frequently Asked Questions

APTGV50H120T3G is a Transistors - IGBTs - Modules manufactured by Microsemi Corporation. IGBT MODULE 1200V 75A 270W SP3

The mounting type of APTGV50H120T3G is Chassis Mount.

The package type of APTGV50H120T3G is SP3.

The current rating of APTGV50H120T3G is 75 A.

Yes, APTGV50H120T3G is listed as Obsolete. Consider requesting a quote for alternative parts.

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