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APTGT200A602G - Microsemi Corporation - Transistors - IGBTs - Modules

APTGT200A602G

Microsemi Corporation

IGBT MODULE 600V 290A 625W SP2

APTGT200A602G is a Transistors - IGBTs - Modules manufactured by Microsemi Corporation. IGBT MODULE 600V 290A 625W SP2. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 175°C (TJ), package / case SP2, current - collector (ic) (max) 290 A.

In Stock: 2,690

Product Attributes

AttributeValue
Product StatusActive
IGBT TypeTrench Field Stop
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)290 A
Power - Max625 W
Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 200A
Current - Collector Cutoff (Max)50 µA
Input Capacitance (Cies) @ Vce12.3 nF @ 25 V
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Package / CaseSP2
Supplier Device PackageSP2

Frequently Asked Questions

APTGT200A602G is a Transistors - IGBTs - Modules manufactured by Microsemi Corporation. IGBT MODULE 600V 290A 625W SP2

The mounting type of APTGT200A602G is Chassis Mount.

The operating temperature range of APTGT200A602G is -40°C ~ 175°C (TJ).

The package type of APTGT200A602G is SP2.

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