IC FLASH 4GBIT PARALLEL 48TSOP
NAND04GW3C2BN6E is a Memory manufactured by Micron Technology Inc.. IC FLASH 4GBIT PARALLEL 48TSOP. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 2.7V ~ 3.6V, package / case 48-TFSOP (0.724", 18.40mm Width).
In Stock: 5,763
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 4Gb (512M x 8) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 25ns |
| Access Time | 25 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 48-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 48-TSOP |
NAND04GW3C2BN6E is Obsolete. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| S34ML04G100BHA000 | Rochester Electronics, LLC | IC FLASH 4GBIT PARALLEL 63BGA | 100% | View |
| CY14B104LA-ZS25XI | Infineon Technologies | IC NVSRAM 4MBIT PAR 44TSOP II | 100% | View |
| TC58BVG2S0HBAI4 | Kioxia America, Inc. | IC FLASH 4GBIT PARALLEL 63TFBGA | 100% | View |
| CY14B101LA-SZ25XI | Infineon Technologies | IC NVSRAM 1MBIT PARALLEL 32SOIC | 100% | View |
| TC58BYG0S3HBAI6 | Kioxia America, Inc. | IC FLASH 1GBIT PARALLEL 67VFBGA | 90% | View |
| MX63U1GC1GCAXMI01 | Macronix | IC FLASH RAM 1GBIT PAR 533MHZ | 57% | View |
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