IC DRAM 288MBIT PARALLEL 144FBGA
MT49H8M36SJ-25E:B TR is a Memory manufactured by Micron Technology Inc.. IC DRAM 288MBIT PARALLEL 144FBGA. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 95°C (TC), voltage - supply 1.7V ~ 1.9V, package / case 144-TFBGA.
In Stock: 4,271
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | DRAM |
| Memory Size | 288Mb (8M x 36) |
| Memory Interface | Parallel |
| Clock Frequency | 400 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 15 ns |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 144-TFBGA |
| Supplier Device Package | 144-FBGA (18.5x11) |
MT49H8M36SJ-25E:B TR is Obsolete. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| CY7C1041G18-15BVXI | Infineon Technologies | IC SRAM 4MBIT PARALLEL 48VFBGA | 99% | View |
| 70T651S15DR | Renesas Electronics America Inc | IC SRAM 9MBIT PARALLEL 208PQFP | 89% | View |
| MT49H16M36BM-18:B | Micron Technology Inc. | IC DRAM 576MBIT PARALLEL 144UBGA | 85% | View |
| CY7C1399B-15VXIT | Infineon Technologies | IC SRAM 256KBIT PARALLEL 28SOJ | 82% | View |
| 71V424L15YG8 | Renesas Electronics America Inc | IC SRAM 4MBIT PARALLEL 36SOJ | 82% | View |
| CY7B144-15JC | Rochester Electronics, LLC | DUAL-PORT SRAM, 8KX8, 15NS, | 70% | View |
Submit your RFQ for MT49H8M36SJ-25E:B TR and get a quote within 24 hours.
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