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MT47R512M4EB-25E:C - Micron Technology Inc. - Memory

MT47R512M4EB-25E:C

Micron Technology Inc.

IC DRAM 2GBIT PARALLEL 60FBGA

MT47R512M4EB-25E:C is a Memory manufactured by Micron Technology Inc.. IC DRAM 2GBIT PARALLEL 60FBGA. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 85°C (TC), voltage - supply 1.55V ~ 1.9V, package / case 60-TFBGA.

In Stock: 9,292

Product Attributes

AttributeValue
Product StatusDiscontinued at Digi-Key
Memory TypeVolatile
Memory FormatDRAM
TechnologySDRAM - DDR2
Memory Size2Gb (512M x 4)
Memory InterfaceParallel
Clock Frequency400 MHz
Write Cycle Time - Word, Page15ns
Access Time400 ps
Voltage - Supply1.55V ~ 1.9V
Operating Temperature0°C ~ 85°C (TC)
Mounting TypeSurface Mount
Package / Case60-TFBGA
Supplier Device Package60-FBGA (9x11.5)

Frequently Asked Questions

MT47R512M4EB-25E:C is a Memory manufactured by Micron Technology Inc.. IC DRAM 2GBIT PARALLEL 60FBGA

The mounting type of MT47R512M4EB-25E:C is Surface Mount.

The operating temperature range of MT47R512M4EB-25E:C is 0°C ~ 85°C (TC).

The supply voltage of MT47R512M4EB-25E:C is 1.55V ~ 1.9V.

The memory specification of MT47R512M4EB-25E:C is 2Gb (512M x 4).

Alternative Products

MT47R512M4EB-25E:C is Discontinued at Digi-Key. Consider these compatible alternatives:

Part NumberManufacturerDescriptionMatch
EM68C16CWQG-25IH Etron Technology, Inc. IC DRAM 1GBIT PARALLEL 84FBGA 99% View
IS46DR16640B-25DBLA1-TR ISSI, Integrated Silicon Solution Inc IC DRAM 1GBIT PARALLEL 84TWBGA 99% View
AS4C16M16D2-25BCN Alliance Memory, Inc. IC DRAM 256MBIT PARALLEL 84TFBGA 99% View
IS43DR16128B-25EBLI-TR ISSI, Integrated Silicon Solution Inc IC DRAM 2GBIT PARALLEL 84TWBGA 99% View
W9751G6IB-25 Winbond Electronics IC DRAM 512MBIT PARALLEL 84WBGA 99% View
MT47H64M16NF-25E IT:M Micron Technology Inc. IC DRAM 1GBIT PARALLEL 84FBGA 99% View

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