IC DRAM 2GBIT PARALLEL 63FBGA
MT47H512M4THN-3:E TR is a Memory manufactured by Micron Technology Inc.. IC DRAM 2GBIT PARALLEL 63FBGA. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 85°C (TC), voltage - supply 1.7V ~ 1.9V, package / case 63-TFBGA.
In Stock: 5,836
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR2 |
| Memory Size | 2Gb (512M x 4) |
| Memory Interface | Parallel |
| Clock Frequency | 333 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 450 ps |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 63-TFBGA |
| Supplier Device Package | 63-FBGA (8x10) |
MT47H512M4THN-3:E TR is Obsolete. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| IS43DR86400C-3DBLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 60TWBGA | 100% | View |
| IS46DR16320C-3DBLA1 | ISSI, Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 84TWBGA | 100% | View |
| IS43DR16320D-3DBI | ISSI, Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 84TWBGA | 100% | View |
| MT47H32M16CC-3E:B | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | 100% | View |
| IS43DR16128B-3DBLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 2GBIT PARALLEL 84TWBGA | 100% | View |
| MT47H64M16HR-3 L:G TR | Micron Technology Inc. | IC DRAM 1GBIT PARALLEL 84FBGA | 100% | View |
Submit your RFQ for MT47H512M4THN-3:E TR and get a quote within 24 hours.
3J LIMITED
