IC DRAM 2GBIT PARALLEL 63FBGA
MT47H512M4THN-25E:M is a Memory manufactured by Micron Technology Inc.. IC DRAM 2GBIT PARALLEL 63FBGA. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 85°C (TC), voltage - supply 1.7V ~ 1.9V, package / case 63-TFBGA.
In Stock: 7,432
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR2 |
| Memory Size | 2Gb (512M x 4) |
| Memory Interface | Parallel |
| Clock Frequency | 400 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 400 ps |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 63-TFBGA |
| Supplier Device Package | 63-FBGA (8x10) |
MT47H512M4THN-25E:M is Obsolete. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| IS43DR86400E-25DBLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 60TWBGA | 100% | View |
| MT47H128M16RT-25E:C TR | Micron Technology Inc. | IC DRAM 2GBIT PARALLEL 84FBGA | 100% | View |
| AS4C16M16D2-25BCNTR | Alliance Memory, Inc. | IC DRAM 256MBIT PARALLEL 84TFBGA | 100% | View |
| IS46DR16160B-25DBLA1-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PARALLEL 84TWBGA | 100% | View |
| IS43DR82560B-25EBL-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 2GBIT PARALLEL 60TWBGA | 100% | View |
| MT47H64M8CF-25E AIT:G TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | 100% | View |
Submit your RFQ for MT47H512M4THN-25E:M and get a quote within 24 hours.
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