IC DRAM 2GBIT PARALLEL 60FBGA
MT47H512M4EB-25E:C is a Memory manufactured by Micron Technology Inc.. IC DRAM 2GBIT PARALLEL 60FBGA. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 85°C (TC), voltage - supply 1.7V ~ 1.9V, package / case 60-TFBGA.
In Stock: 9,517
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR2 |
| Memory Size | 2Gb (512M x 4) |
| Memory Interface | Parallel |
| Clock Frequency | 400 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 400 ps |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 60-TFBGA |
| Supplier Device Package | 60-FBGA (9x11.5) |
MT47H512M4EB-25E:C is Obsolete. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| IS46DR16160B-25DBLA2-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PARALLEL 84TWBGA | 100% | View |
| W971GG8NB25I TR | Winbond Electronics | IC DRAM 1GBIT PARALLEL 60WBGA | 100% | View |
| IS43DR81280B-25DBLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 1GBIT PARALLEL 60TWBGA | 100% | View |
| AS4C64M16D2-25BAN | Alliance Memory, Inc. | IC DRAM 1GBIT PARALLEL 84FBGA | 100% | View |
| W972GG8KB25I | Winbond Electronics | IC DRAM 2GBIT PARALLEL 84WBGA | 100% | View |
| MT47H256M4SH-25E:M | Micron Technology Inc. | IC DRAM 1GBIT PARALLEL 60FBGA | 100% | View |
Submit your RFQ for MT47H512M4EB-25E:C and get a quote within 24 hours.
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