IC DRAM 2GBIT PARALLEL 90VFBGA
MT46H64M32LFBQ-48 WT:C is a Memory manufactured by Micron Technology Inc.. IC DRAM 2GBIT PARALLEL 90VFBGA. Key specifications: mounting type Surface Mount, operating temperature -25°C ~ 85°C (TA), voltage - supply 1.7V ~ 1.95V, package / case 90-VFBGA.
In Stock: 3,493
| Attribute | Value |
|---|---|
| Product Status | Last Time Buy |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR |
| Memory Size | 2Gb (64M x 32) |
| Memory Interface | Parallel |
| Clock Frequency | 208 MHz |
| Write Cycle Time - Word, Page | 14.4ns |
| Access Time | 5 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -25°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 90-VFBGA |
| Supplier Device Package | 90-VFBGA (8x13) |
MT46H64M32LFBQ-48 WT:C is Last Time Buy. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| MT46H128M16LFDD-48 AIT:C | Micron Technology Inc. | IC DRAM 2GBIT PARALLEL 60VFBGA | 100% | View |
| MT46H32M32LFJG-5 IT:A TR | Micron Technology Inc. | IC DRAM 1GBIT PARALLEL 168VFBGA | 98% | View |
| MT48H32M16LFB4-6 AAT:C TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 54VFBGA | 90% | View |
| 70V3569S5BFI8 | Renesas Electronics America Inc | IC SRAM 576KBIT PAR 208CABGA | 81% | View |
| 70V3379S5BFI | Renesas Electronics America Inc | IC SRAM 576KBIT PAR 208CABGA | 81% | View |
| 71V65803S100BGGI | Renesas Electronics America Inc | IC SRAM 9MBIT PARALLEL 119PBGA | 55% | View |
Submit your RFQ for MT46H64M32LFBQ-48 WT:C and get a quote within 24 hours.
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