IC RLDRAM 1.125GBIT PAR 168BGA
MT44K32M36RB-107E:A is a Memory manufactured by Micron Technology Inc.. IC RLDRAM 1.125GBIT PAR 168BGA. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 95°C (TC), voltage - supply 1.28V ~ 1.42V, package / case 168-TBGA.
In Stock: 1,738
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | RLDRAM 3 |
| Memory Size | 1.125Gb (32Mb x 36) |
| Memory Interface | Parallel |
| Clock Frequency | 933 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 8 ns |
| Voltage - Supply | 1.28V ~ 1.42V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 168-TBGA |
| Supplier Device Package | 168-BGA (13.5x13.5) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| MT44K16M36RB-107E IT:B TR | Micron Technology Inc. | IC DRAM 576MBIT PARALLEL 168BGA | 100% | View |
| IS49RL36320-107EBL | ISSI, Integrated Silicon Solution Inc | IC DRAM 1.152GBIT PAR 168FBGA | 100% | View |
| IDT71T75902S80PF8 | Renesas Electronics America Inc | IC SRAM 18MBIT PARALLEL 100TQFP | 81% | View |
| IDT71V3559SA80BQGI | Renesas Electronics America Inc | IC SRAM 4.5MBIT PAR 165CABGA | 72% | View |
| IS61WV12824-8BL | ISSI, Integrated Silicon Solution Inc | IC SRAM 3MBIT PARALLEL 119PBGA | 72% | View |
| 71V547XS80PFG | IDT, Integrated Device Technology Inc | IC SRAM 4.5MBIT PARALLEL 100TQFP | 72% | View |
Submit your RFQ for MT44K32M36RB-107E:A and get a quote within 24 hours.
3J LIMITED
