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MT41K512M8RH-107:E - Micron Technology Inc. - Memory

MT41K512M8RH-107:E

Micron Technology Inc.

IC DRAM 4GBIT PARALLEL 78FBGA

MT41K512M8RH-107:E is a Memory manufactured by Micron Technology Inc.. IC DRAM 4GBIT PARALLEL 78FBGA. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 95°C (TC), voltage - supply 1.283V ~ 1.45V, package / case 78-TFBGA.

In Stock: 6,879

Product Attributes

AttributeValue
Product StatusObsolete
Memory TypeVolatile
Memory FormatDRAM
TechnologySDRAM - DDR3L
Memory Size4Gb (512M x 8)
Memory InterfaceParallel
Clock Frequency933 MHz
Write Cycle Time - Word, Page-
Access Time20 ns
Voltage - Supply1.283V ~ 1.45V
Operating Temperature0°C ~ 95°C (TC)
Mounting TypeSurface Mount
Package / Case78-TFBGA
Supplier Device Package78-FBGA (9x10.5)

Frequently Asked Questions

MT41K512M8RH-107:E is a Memory manufactured by Micron Technology Inc.. IC DRAM 4GBIT PARALLEL 78FBGA

The mounting type of MT41K512M8RH-107:E is Surface Mount.

The operating temperature range of MT41K512M8RH-107:E is 0°C ~ 95°C (TC).

The supply voltage of MT41K512M8RH-107:E is 1.283V ~ 1.45V.

The memory specification of MT41K512M8RH-107:E is 4Gb (512M x 8).

Alternative Products

MT41K512M8RH-107:E is Obsolete. Consider these compatible alternatives:

Part NumberManufacturerDescriptionMatch
W634GU8QB11I TR Winbond Electronics 4GB DDR3L 1.35V SDRAM, X8, 933MH 100% View
NDT16PFJ-9MET TR Insignis Technology Corporation IC DRAM 1GBIT PARALLEL 96FBGA 99% View
EM6GE16EWAKG-10IH Etron Technology, Inc. IC DRAM 4GBIT PARALLEL 96FBGA 99% View
EM6GD08EWAHH-10IH Etron Technology, Inc. IC DRAM 2GBIT PARALLEL 78FBGA 99% View
W634GU6QB-09 Winbond Electronics 4GB DDR3L 1.35V SDRAM, X16, 1066 94% View
71V016SA20BF8 Renesas Electronics America Inc IC SRAM 1MBIT PARALLEL 48CABGA 74% View

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