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MT41K1G4RH-107:E - Micron Technology Inc. - Memory

MT41K1G4RH-107:E

Micron Technology Inc.

IC DRAM 4GBIT PARALLEL 78FBGA

MT41K1G4RH-107:E is a Memory manufactured by Micron Technology Inc.. IC DRAM 4GBIT PARALLEL 78FBGA. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 95°C (TC), voltage - supply 1.283V ~ 1.45V, package / case 78-TFBGA.

In Stock: 3,817

Product Attributes

AttributeValue
Product StatusObsolete
Memory TypeVolatile
Memory FormatDRAM
TechnologySDRAM - DDR3L
Memory Size4Gb (1G x 4)
Memory InterfaceParallel
Clock Frequency933 MHz
Write Cycle Time - Word, Page-
Access Time20 ns
Voltage - Supply1.283V ~ 1.45V
Operating Temperature0°C ~ 95°C (TC)
Mounting TypeSurface Mount
Package / Case78-TFBGA
Supplier Device Package78-FBGA (9x10.5)

Frequently Asked Questions

MT41K1G4RH-107:E is a Memory manufactured by Micron Technology Inc.. IC DRAM 4GBIT PARALLEL 78FBGA

The mounting type of MT41K1G4RH-107:E is Surface Mount.

The operating temperature range of MT41K1G4RH-107:E is 0°C ~ 95°C (TC).

The supply voltage of MT41K1G4RH-107:E is 1.283V ~ 1.45V.

The memory specification of MT41K1G4RH-107:E is 4Gb (1G x 4).

Alternative Products

MT41K1G4RH-107:E is Obsolete. Consider these compatible alternatives:

Part NumberManufacturerDescriptionMatch
MT41K512M4DA-107:K Micron Technology Inc. IC DRAM 2GBIT PARALLEL 78FBGA 100% View
W631GG8NB11I Winbond Electronics 1GB DDR3 SDRAM, X8, 933MHZ, INDU 99% View
IM4G08D3FDBG-093I Intelligent Memory Ltd. DDR3 4GB X8 1.35V/1.5V 1067MHZ I 93% View
70V37L20PFGI8 Renesas Electronics America Inc IC SRAM 576KBIT PARALLEL 100TQFP 74% View
70V05L20J8 Renesas Electronics America Inc IC SRAM 64KBIT PARALLEL 68PLCC 74% View
70V27S20PFI Renesas Electronics America Inc IC SRAM 512KBIT PARALLEL 100TQFP 74% View

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