IC DRAM 4GBIT PARALLEL 533MHZ
MT41J512M8THU-187E:A is a Memory manufactured by Micron Technology Inc.. IC DRAM 4GBIT PARALLEL 533MHZ. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 95°C (TC), voltage - supply 1.425V ~ 1.575V, package / case 82-FBGA.
In Stock: 9,873
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3 |
| Memory Size | 4Gb (512M x 8) |
| Memory Interface | Parallel |
| Clock Frequency | 533 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 13.125 ns |
| Voltage - Supply | 1.425V ~ 1.575V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 82-FBGA |
| Supplier Device Package | - |
MT41J512M8THU-187E:A is Obsolete. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| MT41J128M16HA-187E:D | Micron Technology Inc. | IC DRAM 2GBIT PARALLEL 96FBGA | 100% | View |
| MT41J256M8JE-187E:A | Micron Technology Inc. | IC DRAM 2GBIT PARALLEL 82FBGA | 100% | View |
| MT41J512M8THD-187E:D | Micron Technology Inc. | IC DRAM 4GBIT PARALLEL 78FBGA | 100% | View |
| CY7C1046CV33-12VC | Rochester Electronics, LLC | STANDARD SRAM, 1MX4, 12NS | 74% | View |
| 70V659S12BCI | Renesas Electronics America Inc | IC SRAM 4.5MBIT PAR 256CABGA | 73% | View |
| 70V658S12BCI8 | Renesas Electronics America Inc | IC SRAM 2MBIT PARALLEL 256CABGA | 73% | View |
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