IC FLASH 1GBIT SERIAL NAND 8-WSO
MX35UF1GE4AD-Z4I6 is a Memory manufactured by Macronix. IC FLASH 1GBIT SERIAL NAND 8-WSO. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 1.7V ~ 1.95V, package / case 8-WDFN Exposed Pad.
In Stock: 6,580
| Attribute | Value |
|---|---|
| DigiKey Programmable | - |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND (SLC) |
| Memory Size | 1Gbit |
| Memory Organization | 256M x 4 |
| Memory Interface | SPI - Quad I/O |
| Clock Frequency | 133 MHz |
| Write Cycle Time - Word, Page | 760µs |
| Access Time | 5 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-WDFN Exposed Pad |
| Supplier Device Package | 8-WSON (8x6) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| BY25FQ16ESTIG(R) | BYTe Semiconductor | 16 MBIT, 3.0V (2.7V TO 3.6V), -4 | 82% | View |
| BY25FQ16ESSIG(T) | BYTe Semiconductor | 16 MBIT, 3.0V (2.7V TO 3.6V), -4 | 82% | View |
| BY25FQ16ESMIG(R) | BYTe Semiconductor | 16 MBIT, 3.0V (2.7V TO 3.6V), -4 | 82% | View |
| BY25FQ16ESSIG(R) | BYTe Semiconductor | 16 MBIT, 3.0V (2.7V TO 3.6V), -4 | 82% | View |
| BY25FQ16ESEIG(R) | BYTe Semiconductor | 16 MBIT, 3.0V (2.7V TO 3.6V), -4 | 82% | View |
| BY25FQ16ESWIG(R) | BYTe Semiconductor | 16 MBIT, 3.0V (2.7V TO 3.6V), -4 | 82% | View |
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