RFQ List

No items in your RFQ list

Estimated Total: $0.00
View RFQ List
FII50-12E - IXYS - Transistors - IGBTs - Arrays

FII50-12E

IXYS

IGBT H BRIDGE 1200V 50A I4PAK5

FII50-12E is a Transistors - IGBTs - Arrays manufactured by IXYS. IGBT H BRIDGE 1200V 50A I4PAK5. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case i4-Pac™-5, current - collector (ic) (max) 50 A.

In Stock: 7,114

Product Attributes

AttributeValue
Product StatusObsolete
IGBT TypeNPT
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)50 A
Power - Max200 W
Vce(on) (Max) @ Vge, Ic2.6V @ 15V, 30A
Current - Collector Cutoff (Max)400 µA
Input Capacitance (Cies) @ Vce2 nF @ 25 V
InputStandard
NTC ThermistorNo
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / Casei4-Pac™-5
Supplier Device PackageISOPLUS i4-PAC™

Frequently Asked Questions

FII50-12E is a Transistors - IGBTs - Arrays manufactured by IXYS. IGBT H BRIDGE 1200V 50A I4PAK5

The mounting type of FII50-12E is Through Hole.

The operating temperature range of FII50-12E is -55°C ~ 150°C (TJ).

The package type of FII50-12E is i4-Pac™-5.

Yes, FII50-12E is listed as Obsolete. Consider requesting a quote for alternative parts.

Related Products

Need a Quote for This Part?

Submit your RFQ for FII50-12E and get a quote within 24 hours.

Top
Live Chat
Hello! How can we help you today? Feel free to ask about pricing, availability, or technical details.