Renesas Electronics Corporation
8-PIN 2X3 DFN, IND TEP, WIDE VCC
AT25EU0021A-MAUN-T is a Memory manufactured by Renesas Electronics Corporation. 8-PIN 2X3 DFN, IND TEP, WIDE VCC. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 1.65V ~ 3.6V, package / case 8-UFDFN Exposed Pad.
In Stock: 8,842
| Attribute | Value |
|---|---|
| DigiKey Programmable | - |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR (SLC) |
| Memory Size | 2Mbit |
| Memory Organization | 256K x 8 |
| Memory Interface | SPI - Quad I/O |
| Clock Frequency | 85 MHz |
| Write Cycle Time - Word, Page | 3ms, 3ms |
| Access Time | 7 ns |
| Voltage - Supply | 1.65V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-UFDFN Exposed Pad |
| Supplier Device Package | 8-UDFN (2x3) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| AT25EU0011A-MAUN-T | Renesas Electronics Corporation | 8-PIN 2X3 DFN, IND TEP, WIDE VCC | 100% | View |
| W25M512JVEIM TR | Winbond Electronics | SPIFLASH, 3V, 512M-BIT, 4KB UNIF | 86% | View |
| EM008LXQBDH13ES1T | Everspin Technologies Inc. | IC RAM 16MB XSPI/OCTAL 24TBGA | 77% | View |
| W25N512GWEIR TR | Winbond Electronics | 512MB SERIAL NAND FLASH, 1.8V | 75% | View |
| GD25Q16ESIGR | GigaDevice Semiconductor (HK) Limited | 16MBIT NOR FLASH /3.3V /SOP8 208 | 58% | View |
| GD25Q16EEIGR | GigaDevice Semiconductor (HK) Limited | 16MBIT NOR FLASH /3.3V /WSON 3*2 | 58% | View |
Submit your RFQ for AT25EU0021A-MAUN-T and get a quote within 24 hours.
3J LIMITED
