ECC SDRAM, 512MB, 3.3V, 64MX8, 1
IME5108SDBETG-75I is a Memory manufactured by Intelligent Memory Ltd.. ECC SDRAM, 512MB, 3.3V, 64MX8, 1. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 3V ~ 3.6V, package / case 54-TSOP (0.400", 10.16mm Width).
In Stock: 18
| Attribute | Value |
|---|---|
| DigiKey Programmable | - |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM |
| Memory Size | 512Mbit |
| Memory Organization | 64M x 8 |
| Memory Interface | LVTTL |
| Clock Frequency | 133 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 5.4 ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 54-TSOP (0.400", 10.16mm Width) |
| Supplier Device Package | 54-TSOP II |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| MT48LC16M16A2P-7E IT:G | Micron Technology Inc. | IC DRAM 256MBIT PAR 54TSOP II | 99% | View |
| MT48LC16M16A2P-7E IT:D TR | Micron Technology Inc. | IC DRAM 256MBIT PAR 54TSOP II | 99% | View |
| MT48LC16M16A2TG-7E IT:D TR | Micron Technology Inc. | IC DRAM 256MBIT PAR 54TSOP II | 99% | View |
| IS45S32400F-7TLA1-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | 96% | View |
| IS42S16320F-7BLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 54TFBGA | 96% | View |
| IS42S32800J-7BLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PARALLEL 90TFBGA | 96% | View |
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3J LIMITED
