ISSI, Integrated Silicon Solution Inc
IC DRAM 2GBIT PARALLEL 96TWBGA
IS43TR16128DL-125KBL is a Memory manufactured by ISSI, Integrated Silicon Solution Inc. IC DRAM 2GBIT PARALLEL 96TWBGA. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 95°C (TC), voltage - supply 1.283V ~ 1.45V, package / case 96-TFBGA.
In Stock: 2,295
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3L |
| Memory Size | 2Gb (128M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 800 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 20 ns |
| Voltage - Supply | 1.283V ~ 1.45V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 96-TFBGA |
| Supplier Device Package | 96-TWBGA (9x13) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| EM6HD08EWAHH-12H | Etron Technology, Inc. | IC DRAM 2GBIT PARALLEL 78FBGA | 100% | View |
| W631GU6RB11I | Winbond Electronics | 1GB DDR3L 1.35V SDRAM, X16, 933M | 94% | View |
| W632GU6RB-11 | Winbond Electronics | IC DRAM 2GBIT PAR 96VFBGA | 94% | View |
| MT41K512M8DA-107 AIT:P TR | Micron Technology Inc. | IC DRAM 4GBIT PARALLEL 78FBGA | 92% | View |
| MT41K256M16TW-107 AUT:P | Micron Technology Inc. | IC DRAM 4GBIT PARALLEL 96FBGA | 92% | View |
| EM6GE08EW9G-10H | Etron Technology, Inc. | IC DRAM 4GBIT PARALLEL 78FBGA | 92% | View |
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