ISSI, Integrated Silicon Solution Inc
IC DRAM 2GBIT PAR 96TWBGA
IS43TR16128D-107MBL-TR is a Memory manufactured by ISSI, Integrated Silicon Solution Inc. IC DRAM 2GBIT PAR 96TWBGA. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 95°C (TC), voltage - supply 1.425V ~ 1.575V, package / case 96-TFBGA.
In Stock: 6,344
| Attribute | Value |
|---|---|
| DigiKey Programmable | - |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3 |
| Memory Size | 2Gbit |
| Memory Organization | 128M x 16 |
| Memory Interface | Parallel |
| Clock Frequency | 933 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 20 ns |
| Voltage - Supply | 1.425V ~ 1.575V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 96-TFBGA |
| Supplier Device Package | 96-TWBGA (9x13) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| IS46TR16640C-107MBLA2 | ISSI, Integrated Silicon Solution Inc | IC DRAM 1GBIT PARALLEL 96TWBGA | 100% | View |
| AS4C32M16D3-10BCN | Alliance Memory, Inc. | IC DRAM 512MBIT PARALLEL 96FBGA | 100% | View |
| IS46TR81024B-107MBLA1 | ISSI, Integrated Silicon Solution Inc | IC DRAM 8GBIT PAR 78TWBGA | 100% | View |
| IS43TR16256BL-107MBLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 4GBIT PARALLEL 96TWBGA | 99% | View |
| W634GU6QB11I | Winbond Electronics | 4GB DDR3L 1.35V SDRAM, X16, 933M | 99% | View |
| 70V38L20PFGI | Renesas Electronics America Inc | IC SRAM 1.125MBIT PAR 100TQFP | 79% | View |
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