ISSI, Integrated Silicon Solution Inc
IC DRAM 2GBIT PAR 90TFBGA
IS43LR32640B-5BLI is a Memory manufactured by ISSI, Integrated Silicon Solution Inc. IC DRAM 2GBIT PAR 90TFBGA. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 1.7V ~ 1.95V, package / case 90-TFBGA.
In Stock: 5,686
| Attribute | Value |
|---|---|
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR |
| Memory Size | 2Gbit |
| Memory Organization | 64M x 32 |
| Memory Interface | Parallel |
| Clock Frequency | 208 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 5 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 90-TFBGA |
| Supplier Device Package | 90-TFBGA (8x13) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| MT46H128M16LFDD-48 IT:C TR | Micron Technology Inc. | IC DRAM 2GBIT PARALLEL 60VFBGA | 100% | View |
| MT46H16M32LFB5-5 IT:C TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 90VFBGA | 98% | View |
| MT46H8M32LFB5-5 IT:H TR | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 90VFBGA | 98% | View |
| 70V3579S5BCI | Renesas Electronics America Inc | IC SRAM 1.125MBIT PAR 256CABGA | 81% | View |
| 71T75602S100BGI8 | Renesas Electronics America Inc | IC SRAM 18MBIT PARALLEL 119PBGA | 58% | View |
| 71V2556SA100BGGI | Renesas Electronics America Inc | IC SRAM 4.5MBIT PARALLEL 119PBGA | 55% | View |
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