ISSI, Integrated Silicon Solution Inc
32G, 1.06-1.17/1.70-1.95V, LPDDR
IS43LQ32K01S2A-053BLI is a Memory manufactured by ISSI, Integrated Silicon Solution Inc. 32G, 1.06-1.17/1.70-1.95V, LPDDR. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 95°C (TC), voltage - supply 0.57V ~ 0.65V, 1.06V ~ 1.17V, 1.70V ~ 1.95V, package / case 200-TFBGA.
In Stock: 136
| Attribute | Value |
|---|---|
| DigiKey Programmable | - |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR4X |
| Memory Size | 32Gbit |
| Memory Organization | 1G x 32 |
| Memory Interface | LVSTL |
| Clock Frequency | 1.866 GHz |
| Write Cycle Time - Word, Page | 18ns |
| Access Time | 3.5 ns |
| Voltage - Supply | 0.57V ~ 0.65V, 1.06V ~ 1.17V, 1.70V ~ 1.95V |
| Operating Temperature | -40°C ~ 95°C (TC) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 200-TFBGA |
| Supplier Device Package | 200-TFBGA (10x14.5) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| W66BL6NBUAGJ TR | Winbond Electronics | 2GB LPDDR4, X16, 1866MHZ, -40C~1 | 93% | View |
| W66CP2NQUAHJ | Winbond Electronics | 4GB LPDDR4, DDP, X32, 2133MHZ, - | 87% | View |
| MT53E384M32D2FW-046 AIT:E | Micron Technology Inc. | IC DRAM 12GBIT PAR 200TFBGA | 87% | View |
| MT53E128M32D2FW-046 AUT:A | Micron Technology Inc. | IC DRAM 4GBIT PAR 200TFBGA | 87% | View |
| MT53E512M16D1FW-046 AAT:D TR | Micron Technology Inc. | IC DRAM 8GBIT PAR 200TFBGA | 87% | View |
| MT53E512M16D1FW-046 AIT:D | Micron Technology Inc. | IC DRAM 8GBIT PAR 200TFBGA | 87% | View |
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