ISSI, Integrated Silicon Solution Inc
16G, 1.06-1.17/1.70-1.95V, LPDDR
IS43LQ32512A-053BLI-TR is a Memory manufactured by ISSI, Integrated Silicon Solution Inc. 16G, 1.06-1.17/1.70-1.95V, LPDDR. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 95°C (TC), voltage - supply 1.06V ~ 1.17V, 1.7V ~ 1.95V, package / case 200-TFBGA.
In Stock: 4,320
| Attribute | Value |
|---|---|
| DigiKey Programmable | - |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR4X |
| Memory Size | 16Gbit |
| Memory Organization | 1G x 16 |
| Memory Interface | LVSTL |
| Clock Frequency | 1.866 GHz |
| Write Cycle Time - Word, Page | 18ns |
| Access Time | 3.5 ns |
| Voltage - Supply | 1.06V ~ 1.17V, 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 95°C (TC) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 200-TFBGA |
| Supplier Device Package | 200-TFBGA (10x14.5) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| W66DP2RQQAHJ | Winbond Electronics | 8GB LPDDR4/4X, DDP, X32, 2133MHZ | 94% | View |
| IS43LQ32512A-046BLI-TR | ISSI, Integrated Silicon Solution Inc | 16G, 1.06-1.17/1.70-1.95V, LPDDR | 94% | View |
| MT53E768M32D4DE-046 AIT:E TR | Micron Technology Inc. | IC DRAM 24GBIT 200TFBGA | 94% | View |
| MT53E768M32D4DE-046 AIT:E | Micron Technology Inc. | IC DRAM 24GBIT 200TFBGA | 94% | View |
| MT53E1G16D1ZW-046 AIT:C | Micron Technology Inc. | IC DRAM 16GBIT PAR 200TFBGA | 94% | View |
| MT53E512M32D1ZW-046 AIT:B TR | Micron Technology Inc. | IC DRAM 16GBIT PAR 200TFBGA | 94% | View |
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