ISSI, Integrated Silicon Solution Inc
16G, 1.06-1.17/1.70-1.95V, LPDDR
IS43LQ32512A-046BLI is a Memory manufactured by ISSI, Integrated Silicon Solution Inc. 16G, 1.06-1.17/1.70-1.95V, LPDDR. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 95°C (TC), voltage - supply 1.06V ~ 1.17V, 1.7V ~ 1.95V, package / case 200-TFBGA.
In Stock: 15
| Attribute | Value |
|---|---|
| DigiKey Programmable | - |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR4X |
| Memory Size | 16Gbit |
| Memory Organization | 1G x 16 |
| Memory Interface | LVSTL |
| Clock Frequency | 2.133 GHz |
| Write Cycle Time - Word, Page | 18ns |
| Access Time | 3.5 ns |
| Voltage - Supply | 1.06V ~ 1.17V, 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 95°C (TC) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 200-TFBGA |
| Supplier Device Package | 200-TFBGA (10x14.5) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| MT53E512M32D1ZW-046 AUT:B | Micron Technology Inc. | IC DRAM 16GBIT PAR 200TFBGA | 100% | View |
| MT53E1G32D2FW-046 IT:B | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | 100% | View |
| MT53E768M32D2ZW-046 AUT:C | Micron Technology Inc. | IC DRAM 24GBIT 200TFBGA | 100% | View |
| MT53E512M64D2HJ-046 AIT:B TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | 100% | View |
| MT53E1G32D2FW-046 AIT:B TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | 100% | View |
| MT53E1G32D2FW-046 AIT:C TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | 100% | View |
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