ISSI, Integrated Silicon Solution Inc
IC DRAM 2GBIT PARALLEL 60TWBGA
IS43DR82560B-25EBL is a Memory manufactured by ISSI, Integrated Silicon Solution Inc. IC DRAM 2GBIT PARALLEL 60TWBGA. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 85°C (TC), voltage - supply 1.7V ~ 1.9V, package / case 60-TFBGA.
In Stock: 7,592
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR2 |
| Memory Size | 2Gb (256M x 8) |
| Memory Interface | Parallel |
| Clock Frequency | 400 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 400 ps |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 60-TFBGA |
| Supplier Device Package | 60-TWBGA (10.5x13) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| IS46DR16320C-25DBLA1 | ISSI, Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 84TWBGA | 100% | View |
| W9751G6NB25I TR | Winbond Electronics | IC DRAM 512MBIT PARALLEL 84VFBGA | 100% | View |
| AS4C64M8D2-25BCNTR | Alliance Memory, Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | 100% | View |
| MT47H128M16RT-25E:C | Micron Technology Inc. | IC DRAM 2GBIT PARALLEL 84FBGA | 100% | View |
| MT47H64M8CF-25E IT:G TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | 100% | View |
| MT47H32M16BN-25E:D TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | 100% | View |
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