ISSI, Integrated Silicon Solution Inc
IS43DR32160C - 16MX32, 512MB DDR
IS43DR32160C-3DBL is a Memory manufactured by ISSI, Integrated Silicon Solution Inc. IS43DR32160C - 16MX32, 512MB DDR. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 70°C (TA), voltage - supply 1.7V ~ 1.9V, package / case 126-TFBGA.
In Stock: 6,391
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR2 |
| Memory Size | 512Mb (16M x 32) |
| Memory Interface | SSTL_18 |
| Clock Frequency | 333 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 450 ps |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 126-TFBGA |
| Supplier Device Package | 126-TWBGA (10.5x13.5) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| IS43DR16640B-3DBL | ISSI, Integrated Silicon Solution Inc | IC DRAM 1G PARALLEL 84TWBGA | 100% | View |
| IS43DR16640C-3DBL | ISSI, Integrated Silicon Solution Inc | IC DRAM 1GBIT PARALLEL 84TWBGA | 100% | View |
| MT47H16M16BG-3E:B | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 84FBGA | 100% | View |
| W972GG8JB-3 TR | Winbond Electronics | IC DRAM 2GBIT PARALLEL 60WBGA | 100% | View |
| MT47H128M8CF-3 AAT:H TR | Micron Technology Inc. | IC DRAM 1GBIT PARALLEL 60FBGA | 100% | View |
| MT47H256M8THN-3:H | Micron Technology Inc. | IC DRAM 2GBIT PARALLEL 63FBGA | 100% | View |
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