ISSI, Integrated Silicon Solution Inc
IC DRAM 512M PARALLEL 84TWBGA
IS43DR16320C-3DBL is a Memory manufactured by ISSI, Integrated Silicon Solution Inc. IC DRAM 512M PARALLEL 84TWBGA. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 70°C (TA), voltage - supply 1.7V ~ 1.9V, package / case 84-TFBGA.
In Stock: 8,798
| Attribute | Value |
|---|---|
| Product Status | Not For New Designs |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR2 |
| Memory Size | 512Mb (32M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 333 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 450 ps |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 84-TFBGA |
| Supplier Device Package | 84-TWBGA (8x12.5) |
IS43DR16320C-3DBL is Not For New Designs. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| IS46DR16320E-3DBLA1-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 84TWBGA | 100% | View |
| IS46DR16320E-3DBLA1 | ISSI, Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 84TWBGA | 100% | View |
| IS43DR81280C-3DBL | ISSI, Integrated Silicon Solution Inc | IC DRAM 1GBIT PARALLEL 60TWBGA | 100% | View |
| IS43DR81280A-3DBLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 1GBIT PARALLEL 60TWBGA | 100% | View |
| IS43DR16320C-3DBI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 84TWBGA | 100% | View |
| MT47H512M8WTR-3:C | Micron Technology Inc. | IC DRAM 4GBIT PARALLEL 63FBGA | 100% | View |
Submit your RFQ for IS43DR16320C-3DBL and get a quote within 24 hours.
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