ISSI, Integrated Silicon Solution Inc
IC DRAM 512MBIT PARALLEL 90TFBGA
IS42SM32160E-75BL is a Memory manufactured by ISSI, Integrated Silicon Solution Inc. IC DRAM 512MBIT PARALLEL 90TFBGA. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 70°C (TA), voltage - supply 2.7V ~ 3.6V, package / case 90-TFBGA.
In Stock: 4,479
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile |
| Memory Size | 512Mb (16M x 32) |
| Memory Interface | Parallel |
| Clock Frequency | 133 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 6 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 90-TFBGA |
| Supplier Device Package | 90-TFBGA (8x13) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| IS42S32160F-75EBLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 90TFBGA | 99% | View |
| IS42S32160A-75BL | ISSI, Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 90LFBGA | 99% | View |
| IS42RM32400H-75BLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 128MBIT PARALLEL 90TFBGA | 98% | View |
| IS42RM16800H-75BLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 128MBIT PARALLEL 54TFBGA | 98% | View |
| 70V3569S6BC8 | Renesas Electronics America Inc | IC SRAM 576KBIT PAR 256CABGA | 95% | View |
| CY7C1339A-83AC | Rochester Electronics, LLC | 128K X 32 SYNCHRONOUS BURST SRAM | 74% | View |
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