GAN, RF POWER TRANSISTOR, L-BAND
IGN1011L70 is a Transistors - FETs, MOSFETs - RF manufactured by Integra Technologies Inc.. GAN, RF POWER TRANSISTOR, L-BAND. Key specifications: voltage - rated 120 V, package / case PL32A2, current - test 22 mA, power - output 80W.
In Stock: 11
| Attribute | Value |
|---|---|
| Product Status | Active |
| Transistor Type | GaN HEMT |
| Frequency | 1.03GHz ~ 1.09GHz |
| Gain | 22dB |
| Voltage - Test | 50 V |
| Current Rating (Amps) | - |
| Noise Figure | - |
| Current - Test | 22 mA |
| Power - Output | 80W |
| Voltage - Rated | 120 V |
| Package / Case | PL32A2 |
| Supplier Device Package | PL32A2 |
Submit your RFQ for IGN1011L70 and get a quote within 24 hours.
3J LIMITED
