GAN, RF POWER TRANSISTOR, L-BAND
IGN1011L1200 is a Transistors - FETs, MOSFETs - RF manufactured by Integra Technologies Inc.. GAN, RF POWER TRANSISTOR, L-BAND. Key specifications: voltage - rated 180 V, package / case PL84A1, current - test 160 mA, power - output 1250W.
In Stock: 15
| Attribute | Value |
|---|---|
| Product Status | Active |
| Transistor Type | HEMT |
| Frequency | 1.03GHz ~ 1.09GHz |
| Gain | 16.8dB |
| Voltage - Test | 50 V |
| Current Rating (Amps) | - |
| Noise Figure | - |
| Current - Test | 160 mA |
| Power - Output | 1250W |
| Voltage - Rated | 180 V |
| Package / Case | PL84A1 |
| Supplier Device Package | PL84A1 |
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