INSULATED GATE BIPOLAR TRANSISTO
SIGC109T120R3 is a Transistors - IGBTs - Single manufactured by Infineon Technologies. INSULATED GATE BIPOLAR TRANSISTO. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case Die.
In Stock: 471
| Attribute | Value |
|---|---|
| Product Status | Active |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector (Ic) (Max) | - |
| Current - Collector Pulsed (Icm) | 300 A |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 100A |
| Power - Max | - |
| Switching Energy | - |
| Input Type | Standard |
| Gate Charge | - |
| Td (on/off) @ 25°C | - |
| Test Condition | - |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Die |
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