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IRF5801TRPBF - Infineon Technologies - Transistors - FETs, MOSFETs - Single

IRF5801TRPBF

Infineon Technologies

MOSFET N-CH 200V 600MA MICRO6

IRF5801TRPBF is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 200V 600MA MICRO6. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case SOT-23-6 Thin, TSOT-23-6.

In Stock: 876

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.2Ohm @ 360mA, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs3.9 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds88 pF @ 25 V
FET Feature-
Power Dissipation (Max)2W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMicro6™(TSOP-6)
Package / CaseSOT-23-6 Thin, TSOT-23-6

Frequently Asked Questions

IRF5801TRPBF is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 200V 600MA MICRO6

The mounting type of IRF5801TRPBF is Surface Mount.

The operating temperature range of IRF5801TRPBF is -55°C ~ 150°C (TJ).

The package type of IRF5801TRPBF is SOT-23-6 Thin, TSOT-23-6.

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Manufacturers in Transistors - FETs, MOSFETs - Single

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