40V N-CH FET SOURCE-DOWN CG 3X3
IQE013N04LM6CGATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. 40V N-CH FET SOURCE-DOWN CG 3X3. Key specifications: mounting type Surface Mount, Wettable Flank, operating temperature -55°C ~ 175°C (TJ), package / case 8-PowerTDFN.
In Stock: 4,936
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 31A (Ta), 205A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.35mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 51µA |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 20 V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 107W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount, Wettable Flank |
| Supplier Device Package | PG-TTFN-9-1 |
| Package / Case | 8-PowerTDFN |
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