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IPW65R280E6FKSA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single

IPW65R280E6FKSA1

Infineon Technologies

MOSFET N-CH 650V 13.8A TO247-3

IPW65R280E6FKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 650V 13.8A TO247-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-247-3.

In Stock: 960

Product Attributes

AttributeValue
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C13.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs280mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds950 pF @ 100 V
FET Feature-
Power Dissipation (Max)104W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-3-1
Package / CaseTO-247-3

Frequently Asked Questions

IPW65R280E6FKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 650V 13.8A TO247-3

The mounting type of IPW65R280E6FKSA1 is Through Hole.

The operating temperature range of IPW65R280E6FKSA1 is -55°C ~ 150°C (TJ).

The package type of IPW65R280E6FKSA1 is TO-247-3.

Yes, IPW65R280E6FKSA1 is listed as Obsolete. Consider requesting a quote for alternative parts.

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