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IPU60R1K0CE - Infineon Technologies - Transistors - FETs, MOSFETs - Single

IPU60R1K0CE

Infineon Technologies

N-CHANNEL POWER MOSFET

IPU60R1K0CE is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. N-CHANNEL POWER MOSFET. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 150°C (TJ), package / case TO-251-3 Short Leads, IPak, TO-251AA.

In Stock: 2,307

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id3.5V @ 130µA
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds280 pF @ 100 V
FET Feature-
Power Dissipation (Max)61W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO251-3
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

Frequently Asked Questions

IPU60R1K0CE is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. N-CHANNEL POWER MOSFET

The mounting type of IPU60R1K0CE is Through Hole.

The operating temperature range of IPU60R1K0CE is -40°C ~ 150°C (TJ).

The package type of IPU60R1K0CE is TO-251-3 Short Leads, IPak, TO-251AA.

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