MOSFET N-CH 650V 13.8A TO220-3
IPP65R280C6XKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 650V 13.8A TO220-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3.
In Stock: 2,000
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 13.8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 4.4A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 440µA |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 100 V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-3 |
| Package / Case | TO-220-3 |
Submit your RFQ for IPP65R280C6XKSA1 and get a quote within 24 hours.
3J LIMITED
