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IPN60R360P7SATMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single

IPN60R360P7SATMA1

Infineon Technologies

MOSFET N-CHANNEL 600V 9A SOT223

IPN60R360P7SATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CHANNEL 600V 9A SOT223. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 150°C (TJ), package / case TO-261-4, TO-261AA.

In Stock: 2,442

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs360mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id4V @ 140µA
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds555 pF @ 400 V
FET Feature-
Power Dissipation (Max)7W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT223
Package / CaseTO-261-4, TO-261AA

Frequently Asked Questions

IPN60R360P7SATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CHANNEL 600V 9A SOT223

The mounting type of IPN60R360P7SATMA1 is Surface Mount.

The operating temperature range of IPN60R360P7SATMA1 is -40°C ~ 150°C (TJ).

The package type of IPN60R360P7SATMA1 is TO-261-4, TO-261AA.

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