N-CHANNEL POWER MOSFET
IPI023NE7N3G is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. N-CHANNEL POWER MOSFET. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-262-3 Long Leads, I²Pak, TO-262AA.
In Stock: 5,746
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 75 V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 3.8V @ 273µA |
| Gate Charge (Qg) (Max) @ Vgs | 206 nC @ 10 V |
| Vgs (Max) | - |
| Input Capacitance (Ciss) (Max) @ Vds | 14400 pF @ 37.5 V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO262-3 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Submit your RFQ for IPI023NE7N3G and get a quote within 24 hours.
3J LIMITED
