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IPD50R500CEAUMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single

IPD50R500CEAUMA1

Infineon Technologies

MOSFET N-CH 550V 7.6A TO252

IPD50R500CEAUMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 550V 7.6A TO252. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

In Stock: 1,354

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)550 V
Current - Continuous Drain (Id) @ 25°C7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)13V
Rds On (Max) @ Id, Vgs500mOhm @ 2.3A, 13V
Vgs(th) (Max) @ Id3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs18.7 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds433 pF @ 100 V
FET Feature-
Power Dissipation (Max)57W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Frequently Asked Questions

IPD50R500CEAUMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 550V 7.6A TO252

The mounting type of IPD50R500CEAUMA1 is Surface Mount.

The operating temperature range of IPD50R500CEAUMA1 is -55°C ~ 150°C (TJ).

The package type of IPD50R500CEAUMA1 is TO-252-3, DPak (2 Leads + Tab), SC-63.

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