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IPD110N12N3GATMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single

IPD110N12N3GATMA1

Infineon Technologies

MOSFET N-CH 120V 75A TO252-3

IPD110N12N3GATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 120V 75A TO252-3. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

In Stock: 6,311

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)120 V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs11mOhm @ 75A, 10V
Vgs(th) (Max) @ Id3V @ 83µA (Typ)
Gate Charge (Qg) (Max) @ Vgs65 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4310 pF @ 60 V
FET Feature-
Power Dissipation (Max)136W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Frequently Asked Questions

IPD110N12N3GATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 120V 75A TO252-3

The mounting type of IPD110N12N3GATMA1 is Surface Mount.

The operating temperature range of IPD110N12N3GATMA1 is -55°C ~ 175°C (TJ).

The package type of IPD110N12N3GATMA1 is TO-252-3, DPak (2 Leads + Tab), SC-63.

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