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IPAW70R600CEXKSA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single

IPAW70R600CEXKSA1

Infineon Technologies

MOSFET N-CH 700V 10.5A TO220-31

IPAW70R600CEXKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 700V 10.5A TO220-31. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 150°C (TJ), package / case TO-220-3 Full Pack.

In Stock: 2,725

Product Attributes

AttributeValue
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)700 V
Current - Continuous Drain (Id) @ 25°C10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs600mOhm @ 1A, 10V
Vgs(th) (Max) @ Id3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs22 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds474 pF @ 100 V
FET Feature-
Power Dissipation (Max)86W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-FP
Package / CaseTO-220-3 Full Pack

Frequently Asked Questions

IPAW70R600CEXKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 700V 10.5A TO220-31

The mounting type of IPAW70R600CEXKSA1 is Through Hole.

The operating temperature range of IPAW70R600CEXKSA1 is -40°C ~ 150°C (TJ).

The package type of IPAW70R600CEXKSA1 is TO-220-3 Full Pack.

Yes, IPAW70R600CEXKSA1 is listed as Obsolete. Consider requesting a quote for alternative parts.

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