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IPAW60R280CEXKSA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single

IPAW60R280CEXKSA1

Infineon Technologies

MOSFET N-CH 600V 19.3A TO220

IPAW60R280CEXKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 600V 19.3A TO220. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 150°C (TJ), package / case TO-220-3 Full Pack, Variant.

In Stock: 1,220

Product Attributes

AttributeValue
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C19.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs280mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id3.5V @ 430µA
Gate Charge (Qg) (Max) @ Vgs43 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds950 pF @ 100 V
FET FeatureSuper Junction
Power Dissipation (Max)32W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220 Full Pack, Wide Creepage
Package / CaseTO-220-3 Full Pack, Variant

Frequently Asked Questions

IPAW60R280CEXKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 600V 19.3A TO220

The mounting type of IPAW60R280CEXKSA1 is Through Hole.

The operating temperature range of IPAW60R280CEXKSA1 is -40°C ~ 150°C (TJ).

The package type of IPAW60R280CEXKSA1 is TO-220-3 Full Pack, Variant.

Yes, IPAW60R280CEXKSA1 is listed as Obsolete. Consider requesting a quote for alternative parts.

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