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IPAN70R900P7SXKSA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single

IPAN70R900P7SXKSA1

Infineon Technologies

MOSFET N-CH 700V 6A TO220

IPAN70R900P7SXKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 700V 6A TO220. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 150°C (TJ), package / case TO-220-3 Full Pack.

In Stock: 305

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)700 V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs900mOhm @ 1.1A, 10V
Vgs(th) (Max) @ Id3.5V @ 60µA
Gate Charge (Qg) (Max) @ Vgs6.8 nC @ 10 V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds211 pF @ 400 V
FET Feature-
Power Dissipation (Max)17.9W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-FP
Package / CaseTO-220-3 Full Pack

Frequently Asked Questions

IPAN70R900P7SXKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 700V 6A TO220

The mounting type of IPAN70R900P7SXKSA1 is Through Hole.

The operating temperature range of IPAN70R900P7SXKSA1 is -40°C ~ 150°C (TJ).

The package type of IPAN70R900P7SXKSA1 is TO-220-3 Full Pack.

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