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IPAN50R500CEXKSA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single

IPAN50R500CEXKSA1

Infineon Technologies

MOSFET N-CH 500V 11.1A TO220

IPAN50R500CEXKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 500V 11.1A TO220. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 150°C (TJ), package / case TO-220-3 Full Pack.

In Stock: 474

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500 V
Current - Continuous Drain (Id) @ 25°C11.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)13V
Rds On (Max) @ Id, Vgs500mOhm @ 2.3A, 13V
Vgs(th) (Max) @ Id3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs18.7 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds433 pF @ 100 V
FET Feature-
Power Dissipation (Max)28W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-FP
Package / CaseTO-220-3 Full Pack

Frequently Asked Questions

IPAN50R500CEXKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 500V 11.1A TO220

The mounting type of IPAN50R500CEXKSA1 is Through Hole.

The operating temperature range of IPAN50R500CEXKSA1 is -40°C ~ 150°C (TJ).

The package type of IPAN50R500CEXKSA1 is TO-220-3 Full Pack.

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