MOSFET N-CH 650V 6A TO220
IPA65R660CFDXKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 650V 6A TO220. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3 Full Pack.
In Stock: 500
| Attribute | Value |
|---|---|
| Product Status | Not For New Designs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 660mOhm @ 2.1A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 200µA |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 615 pF @ 100 V |
| FET Feature | - |
| Power Dissipation (Max) | 27.8W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-3-111 |
| Package / Case | TO-220-3 Full Pack |
Submit your RFQ for IPA65R660CFDXKSA1 and get a quote within 24 hours.
3J LIMITED
