SICFET N-CH 1.2KV 13A TO247-4
IMZ120R220M1HXKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. SICFET N-CH 1.2KV 13A TO247-4. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-247-4.
In Stock: 465
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 4A, 18V |
| Vgs(th) (Max) @ Id | 5.7V @ 1.6mA |
| Gate Charge (Qg) (Max) @ Vgs | 8.5 nC @ 18 V |
| Vgs (Max) | +23V, -7V |
| Input Capacitance (Ciss) (Max) @ Vds | 289 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-4-1 |
| Package / Case | TO-247-4 |
Submit your RFQ for IMZ120R220M1HXKSA1 and get a quote within 24 hours.
3J LIMITED
