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IKZ75N65EH5XKSA1 - Infineon Technologies - Transistors - IGBTs - Single

IKZ75N65EH5XKSA1

Infineon Technologies

IGBT 650V 90A W/DIO TO247-4

IKZ75N65EH5XKSA1 is a Transistors - IGBTs - Single manufactured by Infineon Technologies. IGBT 650V 90A W/DIO TO247-4. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 175°C (TJ), package / case TO-247-4, current - collector (ic) (max) 90 A.

In Stock: 6,798

Product Attributes

AttributeValue
Product StatusActive
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)90 A
Current - Collector Pulsed (Icm)300 A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 75A
Power - Max395 W
Switching Energy680µJ (on), 430µJ (off)
Input TypeStandard
Gate Charge166 nC
Td (on/off) @ 25°C26ns/347ns
Test Condition400V, 37.5A, 10Ohm, 15V
Reverse Recovery Time (trr)58 ns
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-4
Supplier Device PackagePG-TO247-4

Frequently Asked Questions

IKZ75N65EH5XKSA1 is a Transistors - IGBTs - Single manufactured by Infineon Technologies. IGBT 650V 90A W/DIO TO247-4

The mounting type of IKZ75N65EH5XKSA1 is Through Hole.

The operating temperature range of IKZ75N65EH5XKSA1 is -40°C ~ 175°C (TJ).

The package type of IKZ75N65EH5XKSA1 is TO-247-4.

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