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IKW50N65ET7XKSA1 - Infineon Technologies - Transistors - IGBTs - Single

IKW50N65ET7XKSA1

Infineon Technologies

IKW50N65ET7XKSA1

IKW50N65ET7XKSA1 is a Transistors - IGBTs - Single manufactured by Infineon Technologies. IKW50N65ET7XKSA1. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 175°C (TJ), package / case TO-247-3, current - collector (ic) (max) 50 A.

In Stock: 9,146

Product Attributes

AttributeValue
Product StatusActive
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)50 A
Current - Collector Pulsed (Icm)150 A
Vce(on) (Max) @ Vge, Ic1.65V @ 15V, 50A
Power - Max273 W
Switching Energy1.2mJ (on), 850µJ (off)
Input TypeStandard
Gate Charge290 nC
Td (on/off) @ 25°C26ns/350ns
Test Condition400V, 50A, 9Ohm, 15V
Reverse Recovery Time (trr)93 ns
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePG-TO247-3

Frequently Asked Questions

IKW50N65ET7XKSA1 is a Transistors - IGBTs - Single manufactured by Infineon Technologies. IKW50N65ET7XKSA1

The mounting type of IKW50N65ET7XKSA1 is Through Hole.

The operating temperature range of IKW50N65ET7XKSA1 is -40°C ~ 175°C (TJ).

The package type of IKW50N65ET7XKSA1 is TO-247-3.

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