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IGW15T120 - Infineon Technologies - Transistors - IGBTs - Single

IGW15T120

Infineon Technologies

IGW15T120 - DISCRETE IGBT WITHOU

IGW15T120 is a Transistors - IGBTs - Single manufactured by Infineon Technologies. IGW15T120 - DISCRETE IGBT WITHOU. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 150°C (TJ), package / case TO-247-3, current - collector (ic) (max) 30 A.

In Stock: 7,690

Product Attributes

AttributeValue
Product StatusActive
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)30 A
Current - Collector Pulsed (Icm)45 A
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 15A
Power - Max110 W
Switching Energy1.3mJ (on), 1.4mJ (off)
Input TypeStandard
Gate Charge85 nC
Td (on/off) @ 25°C50ns/520ns
Test Condition600V, 15A, 56Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePG-TO247-3-21

Frequently Asked Questions

IGW15T120 is a Transistors - IGBTs - Single manufactured by Infineon Technologies. IGW15T120 - DISCRETE IGBT WITHOU

The mounting type of IGW15T120 is Through Hole.

The operating temperature range of IGW15T120 is -40°C ~ 150°C (TJ).

The package type of IGW15T120 is TO-247-3.

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