GANFET N-CH 600V 12.5A 8HSOF
IGT60R190D1SATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. GANFET N-CH 600V 12.5A 8HSOF. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerSFN.
In Stock: 773
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 12.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | 1.6V @ 960µA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 157 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 55.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-HSOF-8-3 |
| Package / Case | 8-PowerSFN |
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