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IGP20N65H5XKSA1 - Infineon Technologies - Transistors - IGBTs - Single

IGP20N65H5XKSA1

Infineon Technologies

IGBT 650V 42A TO220-3

IGP20N65H5XKSA1 is a Transistors - IGBTs - Single manufactured by Infineon Technologies. IGBT 650V 42A TO220-3. Key specifications: mounting type Through Hole, package / case TO-220-3, current - collector (ic) (max) 42 A, power - max 125 W.

In Stock: 201

Product Attributes

AttributeValue
Product StatusActive
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)42 A
Current - Collector Pulsed (Icm)60 A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 20A
Power - Max125 W
Switching Energy170µJ (on), 60µJ (off)
Input TypeStandard
Gate Charge48 nC
Td (on/off) @ 25°C18ns/156ns
Test Condition400V, 10A, 32Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackagePG-TO220-3-1

Frequently Asked Questions

IGP20N65H5XKSA1 is a Transistors - IGBTs - Single manufactured by Infineon Technologies. IGBT 650V 42A TO220-3

The mounting type of IGP20N65H5XKSA1 is Through Hole.

The package type of IGP20N65H5XKSA1 is TO-220-3.

The current rating of IGP20N65H5XKSA1 is 42 A.

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